Increasing the bandwidth of a SiGe HBT LNA with minimum impact on noise figure

摘要

This paper introduces a matching technique for highly sensitive integrated broadband low-noiseamplifiers. Noise matching is achieved by the paralleling of identical input transistors. Impedance matching,based on reducing the number of components to the absolute minimum, is done by using the base-collectorcapacitance as network element. Using a 0.13 m silicon-germanium (SiGe) bipolar complementary metaloxide semiconductor process, simulation results indicate a maximum noise figure of 0.462 dB at roomtemperature and a return loss better than 10 dB from 300 MHz to 1.4 GHz. The technique demonstrates thatSiGe heterojunction bipolar transistors can be used for cost-effective applications in radio astronomy.